“As the only U.S.-investor owned and operated pure-play semiconductor foundry, we are committed to our role in reshoring chip manufacturing. Lincoln Laboratory developed the FDSOI process for making integrated circuits resistant to degradation and malfunction caused by extreme radiation levels. Radiation effects can rapidly degrade microelectronics, and unmitigated can cause compromised performance, malfunctions or complete failure. SkyWater’s RH90 platform is based on MIT Lincoln Laboratory’s 90 nm fully depleted silicon-on-insulator (FDSOI) complementary metal-oxide-semiconductor (CMOS) process, which was engineered to produce radiation-hardened (rad-hard) electronics which can withstand harsh radiation environments. The DOD recently determined that SkyWater has successfully completed the base prototype project. This is another step in SkyWater’s RH90 technology roadmap and is part of the previously announced up to $170M investment in SkyWater by the DOD to broaden onshore production capabilities for strategic rad-hard electronics. This is the latest agreement between SkyWater and the DOD to ensure a reliable and trusted source of U.S.-made chips for use in strategic defense and space applications. * Information listed above is at the time of submission.BLOOMINGTON, Minn.-( BUSINESS WIRE)- SkyWater Technology (NASDAQ: SKYT), the trusted technology realization partner, today announced the Department of Defense (DOD) is funding a $27 million Other Transactional (OT) Agreement Option to further develop intellectual property (IP) for its 90 nm Strategic Rad-Hard by Process (RH90) FDSOI technology platform. The technology will offer a highly manufacturable, lower cost alternative to compound semiconductor based SPADs that are often prohibitively expensive to produce in large arrays.This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria. The experimental results will be benchmarked to the dark count and absorption requirements for the mass-market, long-range autonomous vehicle application. The device structure will be developed with particular emphasis on the semiconductor growth process. This project will implement a photon trapping strained heterostructure device architecture which reduces dark counts while enhancing absorption at the operating wavelength. Current germanium-based avalanche photodiodes require cryogenic cooling due to excessive dark noise from tunneling or dislocations.They suffer from poor absorption at the eye safe wavelengths beyond 1450 nm. This capability will reduce cost, lower complexity, and improve reliability of long-range 3D cameras and help propel the autonomous vehicle industry into widespread adoption.This Small Business Innovation Research (SBIR) Phase I project aims to develop a fully complementary metal-oxide semiconductor compatible single photon avalanche diode (SPADs) based on germanium that operates at eye safe wavelengths. This technology will enable the use of mainstream materials and process technology for the long-range autonomous vehicle segment without compromising eye safety. Eye safety concerns with low-cost silicon sensors force the long-range autonomous vehicle customers to use one pixel at the time or limited field of view imaging using high-cost and complex systems based on materials that require specialty materials and manufacturing. 3D cameras (LiDAR) are being used for precise positioning and velocity determination of objects in augmented reality applications and are crucial for widespread adoption of autonomous cars and trucks where the 200-300 meter range is required. The broader impact/commercial potential of this Small Business Innovation Research (SBIR) Phase I project is to make 3D cameras for long-range LiDAR (Light Detection and Ranging) more affordable, widespread, and as reliable and simple to use as cameras found in common mobile devices.
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